UMC2NT1G Datasheet, PDF (7/10 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors

UMC2NT1G, UMC3NT1G, UMC5NT1G
TYPICAL ELECTRICAL CHARACTERISTICS — UMC3NT1G NPN TRANSISTOR
1
1000
I_C/I_B = 10
25°C
0.1
T_A = -25°C
75°C
100
0.01
V_CE = 10 V
T_A = 75°C
25°C
-25°C
0.001
0
4
3
2
1
00
10
20
40
50
1
I_C, COLLECTOR CURRENT (mA)
Figure 17. V_CE(sat) versus I_C
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
100
f = 1 MHz
I_E = 0 mA
10
T_A = 25°C
1
75°C
25°C
T_A = -25°C
0.1
10
20
30
40
V_R, REVERSE BIAS VOLTAGE (V)
Figure 19. Output Capacitance
0.01
0.001
50
0
V_O = 5 V
2
4
6
8
10
V_in, INPUT VOLTAGE (V)
Figure 20. Output Current versus Input Voltage
100
V_O = 0.2 V
10
1
T_A = -25°C
75°C ^25°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output
Current
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