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UMC2NT1G Datasheet, PDF (5/10 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors
UMC2NT1G, UMC3NT1G, UMC5NT1G
TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1G NPN TRANSISTOR
1
IC/IB = 10
0.1
0.01
1000
TA = -25°C
25°C
75°C
100
VCE = 10 V
TA = 75°C
25°C
-25°C
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
50
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
4
100
25°C
f = 1 MHz
75°C
3
IE = 0 mA
TA = 25°C
10
TA = -25°C
1
2
0.1
1
0.01
VO = 5 V
00
10
20
30
40
50
0.001
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = -25°C
25°C
75°C
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output
Current
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