UMC2NT1G Datasheet, PDF (6/10 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors

UMC2NT1G, UMC3NT1G, UMC5NT1G
TYPICAL ELECTRICAL CHARACTERISTICS — UMC3NT1G PNP TRANSISTOR
1
I_C/I_B = 10
1000
V_CE = 10 V
T_A = -25°C
 0.1
100
25°C
75°C
T_A = 75°C
25°C
-25°C
 0.01
0
4
3
2
1
0
0
 20
 40
I_C, COLLECTOR CURRENT (mA)
Figure 12. V_CE(sat) versus I_C
10
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
f = 1 MHz
l_E = 0 mA
T_A = 25°C
100
75°C
25°C
10
T_A = -25°C
1
 0.1
10
20
30
40
V_R, REVERSE BIAS VOLTAGE (V)
Figure 14. Output Capacitance
100
V_O = 0.2 V
 0.01
V_O = 5 V
50
 0.001
0
1  2 3  4  5  6  7  8  9 10
V_in, INPUT VOLTAGE (V)
Figure 15. Output Current versus Input
Voltage
10
T_A = -25°C
25°C
75°C
1
 0.1
0
10
 20
 30
 40
 50
I_C, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
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