NSBC124XDXV6T1G Datasheet, PDF (7/9 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EDXV6T1, NSBC114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1
10
1000
I_C/I_B = 10
1
T_A = -25°C
25°C
100
0.1
75°C
V_CE = 10 V
T_A = 75°C
25°C
-25°C
0.01
0
1
0.8
0.6
0.4
0.2
0
0
20
40
I_C, COLLECTOR CURRENT (mA)
Figure 12. V_CE(sat) versus I_C
50
10 ₁
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
f = 1 MHz
I_E = 0 V
T_A = 25°C
100
25°C
75°C
10
T_A = -25°C
1
0.1
10
20
30
40
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
0.01
0.001
50
0
V_O = 5 V
2
4
6
8
10
V_in, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input Voltage
100
V_O = 0.2 V
10
T_A = -25°C
25°C
75°C
1
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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