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NSBC124XDXV6T1G Datasheet, PDF (2/9 Pages) ON Semiconductor – Dual Bias Resistor Transistors
◁
NSBC114EDXV6T1, NSBC114EDXV6T5
DEVICE MARKING, ORDERING, AND RESISTOR VALUES
Device†
Package*
Marking
NSBC114EDXV6T1
SOT−563
7A
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
SOT−563
7B
NSBC144EDXV6T1
SOT−563
7C
NSBC114YDXV6T1
SOT−563
7D
NSBC114TDXV6T1 (Note 2)
SOT−563
7E
NSBC143TDXV6T1 (Notes 2)
SOT−563
7F
NSBC113EDXV6T1 (Note 2)
SOT−563
7G
NSBC123EDXV6T1 (Notes 2)
SOT−563
7H
NSBC143EDXV6T1 (Notes 2)
SOT−563
7J
NSBC143ZDXV6T1 (Notes 2)
SOT−563
7K
NSBC124XDXV6T1 (Notes 2)
SOT−563
7L
NSBC123JDXV6T1 (Note 2)
SOT−563
7M
NSBC115EDXV6T1 (Notes 2)
SOT−563
7N
NSBC144WDXV6T1 (Notes 2)
SOT−563
7P
†The “G’’ suffix indicates Pb−Free package available.
*This package is inherently Pb−Free.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
R1 (kW)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R2 (kW)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
100
22
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
NSBC114EDXV6T1
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
ICBO
ICEO
IEBO
−
−
100 nAdc
−
−
500 nAdc
−
−
0.5 mAdc
−
−
0.2
−
−
0.1
−
−
0.2
−
−
0.9
−
−
1.9
−
−
4.3
−
−
2.3
−
−
1.5
−
− 0.18
−
− 0.13
−
−
0.2
−
− 0.05
−
− 0.13
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBO
50
−
V(BR)CEO
50
−
−
Vdc
−
Vdc
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