NSBC124XDXV6T1G Datasheet, PDF (6/9 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EDXV6T1, NSBC114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC124EDXV6T1 / NSVBC124EDXV6T1G
1
1000
I_C/I_B = 10
25°C
0.1
T_A = -25°C
75°C
100
0.01
V_CE = 10 V
T_A = 75°C
25°C
-25°C
0.001
0
4
3
2
1
0
0
10
20
40
50
1
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) versus I_C
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
f = 1 MHz
I_E = 0 V
10
T_A = 25°C
1
75°C
25°C
T_A = -25°C
0.1
10
20
30
40
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0.01
0.001
50
0
V_O = 5 V
2
4
6
8
10
V_in, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
100
V_O = 0.2 V
10
1
T_A = -25°C
75°C ^25°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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