MMDF2C02HD Datasheet, PDF (7/13 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

MMDF2C02HD
N−Channel
1400
V_DS = 0 V
1200 _Ciss
1000
V_GS = 0 V
T_J = 25°C
800
C_rss
600
400
200
C_iss
C_oss
C_rss
10
5
0
5
10
15
20
V_GS
V_DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
Figure 7. Capacitance Variation
1200
V_DS = 0 V
1000 ^Ciss
P−Channel
V_GS = 0 V
T_J = 25°C
800
600
C_rss
C_iss
400
200
0
10
C_oss
C_rss
5
0
5
10
15
20
V_GS
V_DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
Figure 7. Capacitance Variation
12
24
QT
10
20
V_GS
8
16
6
4 ^Q1
Q2
I_D = 3 A
12
T_J = 25°C
8
2
4
Q3
V_DS
0
0
0
2
4
6
8
10
12
14
Q_T, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
12
18
QT
10
8
V_DS
15
V_GS
12
6
9
4 ^Q1
2
Q3
0
0
Q2
6
I_D = 2 A
T_J = 25°C ₃
0
4
8
12
16
Q_T, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
100
V_DD = 10 V
I_D = 3 A
V_GS = 10 V
T_J = 25°C
t_r
t_d(off)
1000
V_DD = 10 V
I_D = 2 A
V_GS = 10 V
T_J = 25°C
10
t_f
t_d(on)
100
t_d(off)
t_f
t_r
1
10
t_d(on)
1
10
100
1
10
100
R_G, GATE RESISTANCE (OHMS)
R_G, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
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