MMDF2C02HD Datasheet, PDF (1/13 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

MMDF2C02HD
Preferred Device
Power MOSFET
2 Amps, 20 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 mΩ)
Drain Current − Continuous N−Channel
P−Channel
− Pulsed
N−Channel
P−Channel
V_DSS
20
Vdc
V_GS
± 20 Vdc
V_DGR
20
Vdc
I_D
3.8
A
3.3
I_DM
19
20
Operating and Storage Temperature Range
T_J, T_stg − 55
°C
to 150
Total Power Dissipation @ T_A= 25°C (Note 2.)
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 20 V, V_GS = 5.0 V, Peak I_L = 9.0 A,
L = 10 mH, R_G = 25 Ω) N−Channel
(V_DD = 20 V, V_GS = 5.0 V, Peak I_L = 6.0 A,
L = 18 mH, R_G = 25 Ω) P−Channel
Thermal Resistance − Junction to Ambient
(Note 2.)
P_D
E_AS
R_θJA
2.0 Watts
mJ
405
324
62.5 °C/W
Maximum Lead Temperature for Soldering,
T_L
260
°C
0.0625″ from case. Time in Solder Bath is
10 seconds.
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES
20 VOLTS
R_DS(on) = 90 mW (N−Channel)
R_DS(on) = 160 mW (P−Channel)
N−Channel
D
P−Channel
D
G
G
S
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 14
D2C02
LYWW
1
D2C02 = Device Code
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
N−Source
N−Gate
P−Source
P−Gate
18
27
36
45
Top View
N−Drain
N−Drain
P−Drain
P−Drain
ORDERING INFORMATION
Device
Package
Shipping
MMDF2C02HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 7
Publication Order Number:
MMDF2C02HD/D