MMDF2C02HD Datasheet, PDF (3/13 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

MMDF2C02HD
ELECTRICAL CHARACTERISTICS − continued (T_A = 25°C unless otherwise noted) (Note 4)
Characteristic
Symbol Polarity Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS − continued (Note 6)
Total Gate Charge
Q_T
Gate−Source Charge
(V_DS = 16 Vdc, I_D = 3.0 Adc,
Q₁
V_GS = 10 Vdc)
(N)
−
12.5
18
nC
(P)
−
15
20
(N)
−
1.3
−
(P)
−
1.2
−
Gate−Drain Charge
(V_DS = 16 Vdc, I_D = 2.0 Adc,
Q₂
V_GS = 10 Vdc)
Q₃
(N)
−
2.8
−
(P)
−
5.0
−
(N)
−
2.4
−
(P)
−
4.0
−
SOURCE−DRAIN DIODE CHARACTERISTICS (T_C = 25°C)
Forward Voltage (Note 5)
(I_S = 3.0 Adc, V_GS = 0 Vdc)
V_SD
(I_S = 2.0 Adc, V_GS = 0 Vdc)
Reverse Recovery Time
t_rr
(I_S = 3.0 Adc, V_AS = 0 Vdc,
dI_S/dt = 100 A/μs)
t_a
(N)
−
0.79
1.3
Vdc
(P)
−
1.5
2.1
(N)
−
23
−
ns
(P)
−
38
−
(N)
−
18
−
(P)
−
17
−
(I_S = 2.0 Adc, V_AS = 0 Vdc,
t_b
dI_S/dt = 100 A/μs)
(N)
−
5.0
−
(P)
−
21
−
Reverse Recovery Stored
Charge
Q_RR
(N)
−
0.025
−
μC
(P)
−
0.034
−
4. Negative signs for P−Channel device omitted for clarity.
5. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperature.
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