MJE5850_06 Datasheet, PDF (7/8 Pages) ON Semiconductor – 8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

MJE5850, MJE5851, MJE5852
The Safe Operating Area figures shown in Figures 12 and 13 are
specified for these devices under the test conditions shown.
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
100 ms
5 ms
1 ms
T_C =
25°C
dc
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMITMJE5850
MJE5851
MJE5852
7.0 10
20
40 70 100 200 300 400 500
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias
Safe Operating Area
8.0
7.0
6.0 ^{IC/IB = 4}
V_BE(off) = 2 V to 8 V
5.0 ^TJ ^{= 100°C}
4.0
3.0
MJE5850
MJE5851
2.0
MJE5852
1.0
0
100
200
300
400
500
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. RBSOA, Maximum Reverse Bias
Safe Operating Area
3.5
3.0
I_C = 4 A
I_B1 = 1 A
T_J = 25°C
2.5
2.0
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on T_C = 25_C; T_J(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T_C ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found at
any case temperature by using the appropriate curve on
Figure 15.
T_J(pk) may be calculated from the data in Figure 11. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 13 gives the RBSOA
characteristics.
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL
DERATING
0.4
1.5
0.2
1.0
0
2
4
6
8
V_BE(off), BASE−EMITTER VOLTAGE (VOLTS)
Figure 14. Peak Reverse Base Current
0
20
40
60
80 100 120 140 160
T_C, CASE TEMPERATURE (°C)
Figure 15. Forward Bias Power Derating
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