|
MJE5850_06 Datasheet, PDF (1/8 Pages) ON Semiconductor – 8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS | |||
|
MJE5850, MJE5851,
MJE5852
MJE5851 and MJE5852 are Preferred Devices
SWITCHMODEt Series
PNP Silicon Power
Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed
for highâvoltage, highâspeed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated
SWITCHMODE applications.
Features
⢠Switching Regulators
⢠Inverters
⢠Solenoid and Relay Drivers
⢠Motor Controls
⢠Deflection Circuits
⢠Fast TurnâOff Times
⦠100 ns Inductive Fall Time @ 25_C (Typ)
⦠125 ns Inductive Crossover Time @ 25°C (Typ)
⢠Operating Temperature Range â65 to +150_C
⢠100_C Performance Specified for:
⦠Reversed Biased SOA with Inductive Loads
⦠Switching Times with Inductive Loads
⦠Saturation Voltages
⦠Leakage Currents
⢠PbâFree Packages are Available*
http://onsemi.com
8 AMPERE
PCP SILICON
POWER TRANSISTORS
300â350â400 VOLTS
80 WATTS
MARKING
DIAGRAM
1
23
TOâ220AB
CASE 221Aâ09
STYLE 1
MJE585xG
AY WW
MJE585x
G
A
Y
WW
= Device Code
x = 0, 1, or 2
= PbâFree Package
= Assembly Location
= Year
= Work Week
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 â Rev. 4
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MJE5850/D
|
▷ |