MJE5850_06 Datasheet, PDF (4/8 Pages) ON Semiconductor – 8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
MJE5850, MJE5851, MJE5852
TYPICAL ELECTRICAL CHARACTERISTICS
T_J = 150°C
T_J = 25°C
2.0
1.6
I_C = 0.25 A
1.2
1.0 A
2.5 A
V_CE = 5 V
0.8
0.4
5.0 A
T_J = 25°C
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
5.0 7.0 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
I_B, BASE CURRENT (AMPS)
Figure 2. Collector Saturation Region
2.0
1.6
I_C/I_B = 4
1.2
0.8
T_J = 150°C
0.4
T_J = 25°C
0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. Collector−Emitter Saturation Voltage
2.0
1.6
I_C/I_B = 4
1.2
0.8 T_J = 25°C
0.4
0
0.1
T_J = 150°C
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. Base−Emitter Voltage
10⁵
10⁴
T_J = 150°C
10³
100°C
10²
10^{1 REVERSE}
FORWARD
V_CE = 200 V
25°C
10⁰
+0.2 +0.1
0 −0.1 −0.2 −0.3 −0.4 −0.5
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
3000
2000
T_J = 25°C
1000
C_ib
500
C_ob
200
100
50
30
0.1 0.2
0.5 1.0
5.0 10 20 50 100 200 500 1000
V_R, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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