Z0103MN Datasheet, PDF (6/8 Pages) NXP Semiconductors – Logic level four-quadrant triac

Z0103MN, Z0107MN, Z0109MN
1.0
0.9
α
α
0.8
0.7
α = CONDUCTION
ANGLE
0.6
120°
0.5
0.4
α = 180°
0.3
dc
0.2
30°
60°
90°
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I_T(RMS), RMS ON‐STATE CURRENT (AMPS)
Figure 8. Power Dissipation
1.0
0.1
0.01
0.0001 0.001
0.01
0.1
1.0
t, TIME (SECONDS)
10
100
Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board
200 V_RMS
ADJUST FOR
I_TM, 60 Hz V_AC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
C_L
L_L
MEASURE
I
R_S
1N4007
C_S
MT2
1N914 _{51 W}
MT1
G
-
ADJUST FOR ₊
dv/dt_(c)
200 V
Note: Component values are for verification of rated (dv/dt)_c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)_c
10
80°
60°
I_TM
110°
100°
t_w
1.0
V_DRM
f=
1
2 t_w
(dińdt)c 
+ 
6f ITM
1000
1.0
10
di/dt_c, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature
10
400 Hz
300 Hz
V_DRM = 200 V
60 Hz
180 Hz
1.0
60
70
80
90
100
110
T_J, JUNCTION TEMPERATURE (°C)
Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
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