Z0103MN Datasheet, PDF (1/8 Pages) NXP Semiconductors – Logic level four-quadrant triac

Z0103MN, Z0107MN,
Z0109MN
Sensitive Gate Triac Series
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
• Sensitive Gate Trigger Current in Four Trigger Modes
• Blocking Voltage to 600 V
• Glass Passivated Surface for Reliability and Uniformity
• Surface Mount Package
• These are Pb−Free Devices
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
T_J = −40 to +125°C)
On−State Current RMS (T_C = 80°C)
(Full Sine Wave 50 to 60 Hz)
V_DRM,
600
V
V_RRM
I_T(RMS)
1.0
A
Peak Non−repetitive Surge Current (One Full
Cycle Sine Wave, 60 Hz, T_C = 25°C)
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
I_TSM
I²t
8.0
A
0.4
A²s
Average Gate Power (T_C = 80°C, t v 8.3 ms) P_G(AV)
1.0
W
Peak Gate Current (t v 20 ms, T_J = +125°C)
I_GM
1.0
A
Operating Junction Temperature Range
T_J
−40 to °C
+125
Storage Temperature Range
T_stg
−40 to °C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient PCB R_qJA
Mounted per Figure 1
156 °C/W
Thermal Resistance, Junction−to−Tab Meas-
ured on MT2 Tab Adjacent to Epoxy
R_qJT
25 °C/W
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
T_L
260
°C
© Semiconductor Components Industries, LLC, 2009
1
June, 2009 − Rev. 3
http://onsemi.com
TRIAC
1.0 AMPERE RMS
600 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
4
SOT−223
CASE 318E
STYLE 11
AYW
10XMN G
G
12 3
A
= Assembly Location
Y
= Year
W
= Work Week
10XMN = Device Code
x = 3, 7, 9
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping^†
Z0103MNT1G
SOT−223 1000/Tape & Reel
(Pb−Free)
Z0107MNT1G
Z0109MNT1G
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
1000/Tape & Reel
1000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
Z0103MN/D