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Z0103MN Datasheet, PDF (2/8 Pages) NXP Semiconductors – Logic level four-quadrant triac | |||
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Z0103MN, Z0107MN, Z0109MN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C IDRM, IRRM
â
â
TJ = +125°C
â
â
ON CHARACTERISTICS
Peak OnâState Voltage
(ITM = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
VTM
â
â
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G(â)
MT2(â), G(â)
MT2(â), G(+)
Z0103MN
IGT
0.15
â
0.15
â
0.15
â
0.25
â
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G(â)
MT2(â), G(â)
MT2(â), G(+)
Z0107MN
IGT
0.15
â
0.15
â
0.15
â
0.25
â
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G(â)
MT2(â), G(â)
MT2(â), G(+)
Z0109MN
IGT
0.15
â
0.15
â
0.15
â
0.25
â
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G(â) All Types
MT2(â), G(â) All Types
MT2(â), G(+) All Types
Z0103MN
IL
â
â
â
â
â
â
â
â
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G(â) All Types
MT2(â), G(â) All Types
MT2(â), G(+) All Types
Z0107MN
IL
â
â
â
â
â
â
â
â
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G(â) All Types
MT2(â), G(â) All Types
MT2(â), G(+) All Types
Z0109MN
IL
â
â
â
â
â
â
â
â
Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms)
Gate NonâTrigger Voltage (VD = 12 V, RL = 30 Ohms, TJ = 125°C)
All Four Quadrants
VGT
â
â
VGD
0.2
â
Holding Current
(VD = 12 Vdc, Initiating Current = 50 mA, Gate Open)
(Z0103MA)
IH
(Z0107MA, Z0109MA)
â
â
â
â
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
di/dt(c)
1.6
â
Critical Rate of Rise of OffâState Voltage (VD = 67% Rated VDRM, Exponential
Waveform, Gate Open, TJ = 110°C)
Z0103MN
Z0107MN
Z0109MN
dv/dt
10
30
20
60
50
75
Repetitive Critical Rate of Rise of OnâState Current, TJ = 125°C
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt
â
â
Max Unit
5.0
mA
500
mA
1.56
V
mA
3.0
3.0
3.0
5.0
mA
5.0
5.0
5.0
7.0
mA
10
10
10
10
mA
7.0
15
7.0
7.0
mA
10
20
10
10
mA
15
25
15
15
1.3
V
â
V
7.0
mA
10
â
A/ms
V/ms
â
â
â
20
A/ms
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