PZT3906T1 Datasheet, PDF (6/7 Pages) ON Semiconductor – General Purpose Transistor PNP Silicon

2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
PZT3906T1
TYPICAL STATIC CHARACTERISTICS
T_J = +125°C
+25°C
−55 °C
V_CE = 1.0 V
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I_C, COLLECTOR CURRENT (mA)
20 30
50 70 100
200
Figure 13. DC Current Gain
1.0
0.8
I_C = 1.0 mA
0.6
10 mA
30 mA
0.4
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
I_B, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
T_J = 25°C
100 mA
2.0 3.0
5.0 7.0 10
1.0
T_J = 25°C
0.8
0.6
V_BE(sat) @ I_C/I_B = 10
V_BE @ V_CE = 1.0 V
0.4
V_CE(sat) @ I_C/I_B = 10
0.2
0
1.0 2.0 5.0 10
20
50
100 200
I_C, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
1.0
0.5 _{qVC FOR VCE(sat)}
0
−0.5
−1.0
−1.5
q_VB FOR V_BE(sat)
+25°C TO +125°C
−55 °C TO +25°C
+25°C TO +125°C
−55 °C TO +25°C
−2.0
0
20 40 60 80 100 120 140 160 180 200
I_C, COLLECTOR CURRENT (mA)
Figure 16. Temperature Coefficients
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