PZT3906T1 Datasheet, PDF (1/7 Pages) ON Semiconductor – General Purpose Transistor PNP Silicon

PZT3906T1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
−40
−40
−5.0
−200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T_A = 25°C
Thermal Resistance Junction−to−Ambient
(Note 1)
Thermal Resistance Junction−to−Lead #4
Junction and Storage Temperature Range
Symbol
P_D
R_qJA
Max
1.5
12
83.3
Unit
W
mW/°C
°C/W
R_qJA
T_J, T_stg
35
−55 to
+150
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 713 mm² of copper area.
http://onsemi.com
COLLECTOR
2, 4
1
BASE
3
EMITTER
MARKING
DIAGRAM
AYW
2A G
G
1
2A
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
PZT3906T1 SOT−223 1000 / Tape & Reel
PZT3906T1G SOT−223 1000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 2
Publication Order Number:
PZT3906T1/D