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PZT3906T1 Datasheet, PDF (2/7 Pages) ON Semiconductor – General Purpose Transistor PNP Silicon | |||
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PZT3906T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector âEmitter Breakdown Voltage (Note 2)
(IC = â1.0 mAdc, IB = 0)
Collector âBase Breakdown Voltage
(IC = â10 mAdc, IE = 0)
Emitter âBase Breakdown Voltage
(IE = â10 mAdc, IC = 0)
Base Cutoff Current
(VCE = â30 Vdc, VEB = â3.0 Vdc)
Collector Cutoff Current
(VCE = â30 Vdc, VEB = â3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = â0.1 mAdc, VCE = â1.0 Vdc)
(IC = â1.0 mAdc, VCE = â1.0 Vdc)
(IC = â10 mAdc, VCE = â1.0 Vdc)
(IC = â50 mAdc, VCE = â1.0 Vdc)
(IC = â100 mAdc, VCE = â1.0 Vdc)
Collector âEmitter Saturation Voltage
(IC = â10 mAdc, IB = â1.0 mAdc)
(IC = â50 mAdc, IB = â5.0 mAdc)
Base âEmitter Saturation Voltage
(IC = â10 mAdc, IB = â1.0 mAdc)
(IC = â50 mAdc, IB = â5.0 mAdc)
SMALLâSIGNAL CHARACTERISTICS
Current âGain â Bandwidth Product
(IC = â10 mAdc, VCE = â20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = â5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = â0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = â1.0 mAdc, VCE = â10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = â1.0 mAdc, VCE = â10 Vdc, f = 1.0 kHz)
Small âSignal Current Gain
(IC = â1.0 mAdc, VCE = â10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = â1.0 mAdc, VCE = â10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = â100 mAdc, VCE = â5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = â3.0 Vdc, VBE = 0.5 Vdc,
IC = â10 mAdc, IB1 = â1.0 mAdc)
Storage Time
Fall Time
(VCC = â3.0 Vdc, IC = â10 mAdc,
IB1 = IB2 = â1.0 mAdc)
2. Pulse Width ⤠300 ms, Duty Cycle ⤠2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
â40
â40
â5.0
â
â
Vdc
â
â
â
nAdc
â50
â50
HFE
â
60
â
80
â
100
300
60
â
30
â
VCE(sat)
Vdc
â
â0.25
â
â0.4
VBE(sat)
â0.65
â
â0.85
â0.95
fT
MHz
250
â
Cobo
pF
â
4.5
Cibo
â
10
hie
kW
2.0
12
hre
X 10â 4
0.1
10
hfe
â
100
400
hoe
mmhos
3.0
60
NF
dB
â
4.0
td
â
35
tr
â
35
ns
ts
â
225
tf
â
75
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