MUN5311DW1 Datasheet, PDF (6/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC114EPDP6
1
I_C/I_B = 10
25°C
0.1
−55°C
150°C
1000
V_CE = 10 V
100
10
25°C
150°C
−55°C
0.01
0
2.4
2.0
1.6
1.2
0.8
0.4
0
0
1
10
20
30
40
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 12. V_CE(sat) vs. I_C
Figure 13. DC Current Gain
f = 10 kHz
I_E = 0 A
T_A = 25°C
100
150°C
10
1
−55°C
25°C
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 14. Output Capacitance
100
0.1
V_O = 5 V
0.01
50
0
1
2
3
4
5
6
7
V_in, INPUT VOLTAGE (V)
Figure 15. Output Current vs. Input Voltage
10
25°C
−55°C
1
150°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
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