MUN5311DW1 Datasheet, PDF (5/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5311DW1, NSBC114EPDXV6
1
I_C/I_B = 10
0.1
1000
T_A = −25°C
25°C
75°C
100
V_CE = 10 V
T_A = 75°C
−25°C
25°C
0.01
0
10
9
8
7
6
5
4
3
2
1
0
0
20
40
60
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) vs. I_C
10
80
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
f = 10 kHz
l_E = 0 A
T_A = 25°C
100
75°C ^25°C
T_A = −25°C
10
1
0.1
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
0.01
V_O = 5 V
0.001
50
0 1 2 3 4 5 6 7 8 9 10
V_in, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
V_O = 0.2 V
10
T_A = −25°C
25°C
75°C
1
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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