MMDF3N06HD Datasheet, PDF (6/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 60 VOLTS

MMDF3N06HD
1200
C_iss
1000
T_J = 25°C
800
C_rss
600
C_iss
400
200
C_oss
0
−10 −5.0 0
5.0 10
15 20
25 30
V_GS
V_DS
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance Variation
1000
V_DD = 30 V
I_D = 3.0 A
V_GS = 10 V
T_J = 25°C
100
t_d(off)
10
t_f
t_r
t_d(on)
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0 ^Q1
3.0
2.0
1.0
Q3
0
0 2.0
30
QT
V_GS
20
Q2
10
V_DS
4.0 6.0 8.0 10
I_D = 3.0 A
T_J = 25°C
0
12 14 16
Q_g, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
2.5
T_J = 25°C
2.0
V_GS = 0 V
1.5
1.0
0.5
1.0
1.0
10
R_G, GATE RESISTANCE (OHMS)
0
100
0.5 0.55
0.6
0.65
0.7
0.75
0.8
V_SD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage
versus Current
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