MMDF3N06HD Datasheet, PDF (3/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 60 VOLTS

MMDF3N06HD
TYPICAL ELECTRICAL CHARACTERISTICS
6.0
V_GS = 10 V
5.0 ^{6.0 V}
4.5 V
4.0 ^{4.3 V}
4.1 V
3.3 V
3.5 V
3.7 V
3.9 V
3.1 V
T_J = 25°C
2.9 V
3.0
2.7 V
2.0
2.5 V
1.0
2.3 V
2.1 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
6.0
V_DS ≥ 10 V
5.0
4.0
100°C
3.0
25°C
2.0
T_J = −55°C
1.0
0
1.5 1.75 2.0 2.25 2.5 2.75 3.0 3.25 3.5
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.3
I_D = 3.0 A
0.25
T_J = 25°C
0.2
0.15
0.1
0.05
0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.09
0.085
T_J = 25°C
0.08
V_GS = 4.5 V
0.075
0.07
10 V
0.065
0.06
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
1.6
V_GS = 10 V
I_D = 1.5 A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation
with Temperature
1000
V_GS = 0 V
100
10
T_J = 125°C
100°C
1.0
25°C
0
0
5.0
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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