MMDF3N06HD Datasheet, PDF (2/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 60 VOLTS

MMDF3N06HD
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 0.25 mAdc)
Zero Gate Voltage Drain Current
(V_DS = 48 Vdc, V_GS = 0 Vdc)
(V_DS = 48 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 0.25 mAdc)
Static Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 3.3 Adc)
(V_GS = 4.5 Vdc, I_D = 2.5 Adc)
Forward Transconductance
(V_DS = 15 Vdc, I_D = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 30 Vdc, I_D = 3.3 Adc,
V_GS = 4.5 Vdc,
R_G = 30 Ω)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(V_DD = 15 Vdc, I_D = 3.0 Adc,
V_GS = 10 Vdc,
R_G = 9.1 Ω)
(V_DS = 30 Vdc, I_D = 3.3 Adc,
V_GS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 1.7 Adc, V_GS = 0 Vdc)
(I_S = 1.7 Adc, V_GS = 0 Vdc, T_J = 125°C)
Reverse Recovery Time
(I_S = 1.7 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/µs)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
t_rr
t_a
t_b
Q_RR
Min
Typ
Max
Unit
60
−
Vdc
−
µAdc
−
0.001
1.0
−
0.05
25
−
12
100
nAdc
1.0
−
Vdc
−
mW
−
67.5
100
−
82.5
200
Mhos
−
7.5
−
−
442
618
pF
−
97.6
137
−
24.4
34.2
−
10.6
22.1
ns
−
15.9
31.8
−
23.8
47.6
−
14.7
29.4
−
7.0
14
ns
−
4.8
9.6
−
32.4
64.8
−
14.2
28.4
−
14.5
29
nC
−
1.8
−
−
3.5
−
−
3.75
−
Vdc
−
0.78
1.2
−
0.65
−
−
27.9
−
ns
−
23
−
−
4.9
−
−
0.038
−
µC
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