MJE5850 Datasheet, PDF (6/8 Pages) Motorola, Inc – 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

MJE5850 MJE5851 MJE5852
The Safe Operating Area figures shown in Figures 12 and 13 are
specified for these devices under the test conditions shown.
20
10
100 µs
5.0
2.0
TC = 25°C
1.0
5 ms
1 ms
dc
0.5
0.2
BONDING WIRE LIMIT
THERMAL LIMIT
0.1
(SINGLE PULSE)
0.05
SECOND BREAKDOWN LIMIT _MJE5850
MJE5851
0.02
MJE5852
7.0 10
20
40 70 100 200 300 400500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias
Safe Operating Area
8.0
7.0
6.0 ^{IC/IB = 4}
VBE(off) = 2 V to 8 V
5.0 ^{TJ = 100°C}
4.0
3.0
MJE5850
MJE5851
2.0
MJE5852
1.0
0
100
200
300
400
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. RBSOA, Maximum Reverse Bias
Safe Operating Area
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 12 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 12 may be found at any case tem-
perature by using the appropriate curve on Figure 15.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 13 gives the RBSOA character-
istics.
3.5
3.0
IC = 4 A
IB1 = 1 A
TJ = 25°C
2.5
2.0
1.5
1.0
0
2
4
6
8
VBE(off), BASE–EMITTER VOLTAGE (VOLTS)
Figure 14. Peak Reverse Base Current
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 15. Forward Bias Power Derating
6
Motorola Bipolar Power Transistor Device Data