MJE5850 Datasheet, PDF (4/8 Pages) Motorola, Inc – 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

MJE5850 MJE5851 MJE5852
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
0.0025 µF
+V
50 µF
+–
–10 V
1
20
0
2
PW Varied to Attain
IC = 100 mA
INPUT
+V
0
50 Ω
2W
0.2 µF
0.1 µF
500 Ω
500 Ω ^{1/2 W}
1/2 W
0.1 µF
MJE15029
1N4934
500 Ω
1/2 W
0.2 µF
0.0033 µF
500 Ω
1/2 W
1
1Ω2W
2
MJE15028
0.1 µF
– V adjusted to obtain desired IB1
+ V adjusted to obtain desired VBE(off)
–+
50 µF
–V
Lcoil = 80 mH, VCC = 10 V
Rcoil = 0.7 Ω
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 20 V
Vclamp = 250 V
RB adjusted to attain desired IB1
INDUCTIVE TEST CIRCUIT
TUT
1
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
1N4937
OR
EQUIVALENT
Vclamp
RS =
0.1 Ω
Rcoil
Lcoil
VCC
OUTPUT WAVEFORMS
IC
ICM
t1
VCE
VCEM
TIME
tf Clamped
t
tf
Vclamp
t
t2
t1 Adjusted to
Obtain IC
t1 ≈
Lcoil (ICM)
VCC
t2 ≈
Lcoil (ICM)
VClamp
Test Equipment
Scope — Tektronix
475 or Equivalent
RESISTIVE SWITCHING
TURN–ON TIME
1
2
IB1
IB1 adjusted to
obtain the forced
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
VCC = 250 V
RL = 62 Ω
Pulse Width = 10 µs
RESISTIVE TEST CIRCUIT
TUT
1
RL
2
VCC
IB
10%
90% IB1 _VCEM
tc
10% 2%
ICM ICM
VCE
tfi
tsr
trv
tti
IC
90%
ICM
ICM
TIME
Vclamp
VCEM
Figure 7. Inductive Switching Measurements
1.0
tc 100°C
0.8
0.6
tsv 100°C
3.0
IC = 4 A
2.7
IC/IB = 4
TJ = 25°C
2.4
2.1
tsv 25°C
1.8
1.5
0.4
1.2
0.9
0.2 _{tc 25°C}
0.6
0.3
0
0
0
1
2
34
5
6
78
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 8. Inductive Switching Times
4
Motorola Bipolar Power Transistor Device Data