MJE5850 Datasheet, PDF (3/8 Pages) Motorola, Inc – 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
MJE5850 MJE5851 MJE5852
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 150°C
TJ = 25°C
2.0
1.6
IC = 0.25 A
1.2
1.0 A
2.5 A
5.0 A
VCE = 5 V
0.8
TJ = 25°C
0.4
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
5.0 7.0 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IB, BASE CURRENT (AMPS)
Figure 2. Collector Saturation Region
2.0
1.6
IC/IB = 4
1.2
0.8
TJ = 150°C
0.4
TJ = 25°C
0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Voltage
2.0
1.6
IC/IB = 4
1.2
0.8 TJ = 25°C
0.4
0
0.1
TJ = 150°C
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base–Emitter Voltage
105
104
TJ = 150°C
103
100°C
102
101 ^REVERSE
FORWARD
VCE = 200 V
25°C
100
+ 0.2 + 0.1
0 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
3000
2000
TJ = 25°C
1000
Cib
500
Cob
200
100
50
30
0.1 0.2 0.5 1.0
5.0 10 20 50 100 200 500 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3