CAT5251_13 Datasheet, PDF (6/15 Pages) ON Semiconductor – Quad Digital Potentiometer (POT)

CAT5251
Table 7. A.C. CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
t_SU
t_H
t_WH
t_WL
f_SCK
t_LZ
t_RI (Note 8)
t_FI (Note 8)
t_HD
t_CD
t_V
t_HO
t_DIS
t_HZ
t_CS
t_CSS
t_CSH
Data Setup Time
Data Hold Time
SCK High Time
SCK Low Time
Clock Frequency
HOLD to Output Low Z
Input Rise Time
Input Fall Time
HOLD Setup Time
HOLD Hold Time
Output Valid from Clock Low
Output Hold Time
Output Disable Time
HOLD to Output High Z
CS High Time
CS Setup Time
CS Hold Time
50
50
125
125
DC
3
50
2
2
C_L = 50 pF
100
100
200
0
250
100
250
250
250
Units
ns
ns
ns
ns
MHz
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
Table 8. POWER UP TIMING (Notes 8, 9) (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Min
Typ
Max
t_PUR
Power-up to Read Operation
1
t_PUW
Power-up to Write Operation
1
8. This parameter is tested initially and after a design or process change that affects the parameter.
9. t_PUR and t_PUW are the delays required from the time V_CC is stable until the specified operation can be initiated.
Table 9. WIPER TIMING
Symbol
Parameter
t_WRPO
t_WRL
Wiper Response Time After Power Supply Stable
Wiper Response Time After Instruction Issued
Min
Max
5
10
5
10
Units
ms
ms
Units
ms
ms
Table 10. WRITE CYCLE LIMITS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Min
Typ
t_WR
Write Cycle Time
Max
Units
5
ms
Table 11. RELIABILITY CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Reference Test Method
Min
Typ Max
N_END (Note 10)
Endurance
MIL−STD−883, Test Method 1033
1,000,000
T_DR (Note 10)
Data Retention
MIL−STD−883, Test Method 1008
100
V_ZAP (Note 10)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2000
I_LTH (Note 10)
Latch-Up
JEDEC Standard 17
100
10. This parameter is tested initially and after a design or process change that affects the parameter.
Units
Cycles/Byte
Years
V
mA
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