TIP41G_14 Datasheet, PDF (5/7 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
500
2.0
300
200 _{TJ = 150°C}
V_CE = 2.0 V
1.6
T_J = 25°C
100
70
25°C
50
30
20
- 55°C
10
7.0
5.0
0.06 0.1
0.2 0.3 0.4 0.6 1.0
2.0
I_C, COLLECTOR CURRENT (AMP)
4.0 6.0
1.2
I_C = 1.0 A
2.5 A
5.0 A
0.8
0.4
0
10
20 30 50
100 200 300 500 1000
I_B, BASE CURRENT (mA)
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
T_J = 25°C
1.6
1.2
0.8
V_BE(sat) @ I_C/I_B = 10
V_BE @ V_CE = 4.0 V
0.4
V_CE(sat) @ I_C/I_B = 10
0
0.06 0.1
0.2 0.3 0.4 0.6 1.0
2.0 3.0 4.0 6.0
I_C, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
+ 2.5
+ 2.0
*APPLIES FOR I_C/I_B ≤ h_FE/4
+ 1.5
+ 1.0
+ 0.5
* q_VC FOR V_CE(sat)
0
- 0.5
- 1.0
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
- 1.5
q_VB FOR V_BE
- 2.0
- 55°C to + 25°C
- 2.5
0.06 0.1
0.2 0.3 0.5
1.0 2.0 3.0 4.0 6.0
I_C, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
10³
V_CE = 30 V
10²
T_J = 150°C
10¹
100°C
25°C
10⁰
10^-1
I_C = I_CES
10^{-2 REVERSE}
FORWARD
10^-3
- 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7
V_BE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
10 M
1.0 M
100 k
I_C ≈ I_CES
I_C = 10 x I_CES
V_CE = 30 V
10 k
I_C = 2 x I_CES
1.0 k
(TYPICAL I_CES VALUES
OBTAINED FROM FIGURE 12)
0.1 k
20 40
60
80 100 120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base−Emitter Resistance
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