TIP41G_14 Datasheet, PDF (4/7 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.07 ^0.05
0.05
0.02
0.03
0.02 _0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 1.0 0.2
Z_qJC(t) = r(t) R_qJC
R_qJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) Z_qJC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
500 1.0 k
Figure 4. Thermal Response
10
5.0
3.0
T_J = 150°C
1.0 ms
2.0 _{CURVES APPLY BELOW RATED VCEO}
SECONDARY BREAKDOWN LTD
1.0
BONDING WIRE LTD
THERMAL LIMITATION @ T_C = 25°C
0.5
(SINGLE PULSE)
0.5 ms
5.0 ms
0.3
0.2
0.1
5.0
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
10
20
40 60
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80 100
Figure 5. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T_J(pk) = 150°C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
≤ 150°C. T_J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06 0.1
T_J = 25°C
V_CC = 30 V
t_s
I_C/I_B = 10
I_B1 = I_B2
t_f
0.2
0.4 0.6 1.0
2.0
I_C, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
4.0 6.0
300
T_J = 25°C
200
C_ib
100
70
C_ob
50
30
0.5
1.0
2.0 3.0 5.0
10
20 30 50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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