English
Language : 

TIP41G_14 Datasheet, PDF (2/7 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors
◁
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
1.67
57
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
VCEO(sus)
Vdc
40
−
60
−
80
−
100
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP41G, TIP41AG, TIP42G, TIP42AG
(VCE = 60 Vdc, IB = 0)
TIP41BG, TIP41CG, TIP42BG, TIP42CG
ICEO
−
−
mAdc
0.7
0.7
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP41G, TIP42G
(VCE = 60 Vdc, VEB = 0)
TIP41AG, TIP42AG
(VCE = 80 Vdc, VEB = 0)
TIP41BG, TIP42BG
(VCE = 100 Vdc, VEB = 0)
TIP41CG, TIP42CG
ICES
mAdc
−
400
−
400
−
400
−
400
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
IEBO
−
1.0
mAdc
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 600 mAdc)
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
30
15
VCE(sat)
−
VBE(on)
−
−
−
75
Vdc
1.5
Vdc
2.0
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
MHz
3.0
−
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
−
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
 ▷