NSS60600MZ4_16 Datasheet, PDF (5/6 Pages) ON Semiconductor – PNP Transistor

NSS60600MZ4
TYPICAL CHARACTERISTICS
1.2
1.1 _{IC/IB = 10}
1.0
0.9
−40°C
0.8
0.7
0.6
25°C
0.5
0.4
0.3
150°C
0.2
0.1
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
1.2
1.1 _{IC/IB = 50}
1.0
0.9
0.8
−40°C
0.7
0.6
25°C
0.5
0.4
0.3
150°C
0.2
0.1
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
900
800
700
600
500
400
300
200
100
0
0
T_J = 25°C
f_test = 1 MHz
1
2
3
4
5
6
7
8
V_EB, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
180
160
140
120
100
80
60
40
20
0
0
T_J = 25°C
f_test = 1 MHz
10 20 30 40 50 60 70 80 90 100
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
140
T_J = 25°C
120 _{ftest = 1 MHz}
V_CE = 10 V
100
80
60
40
20
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
100
10
1
0.1
0.01
0.1
100 ms
10 ms
1 ms
1s
100 ms
10 ms
DC
1 ms
0.5 ms
1
10
100
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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