NSS60600MZ4_16 Datasheet, PDF (2/6 Pages) ON Semiconductor – PNP Transistor

THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage Temperature Range
1. FR− 4 @ 7.6 mm², 1 oz. copper traces.
2. FR− 4 @ 645 mm², 1 oz. copper traces.
3. Thermal response.
NSS60600MZ4
Symbol
P_D (Note 1)
R_qJA (Note 1)
P_D (Note 2)
R_qJA (Note 2)
P_Dsingle
(Note 3)
T_J, T_stg
Max
800
6.5
155
2
15.6
64
710
−55 to +150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
mW
°C
ORDERING INFORMATION
Device
Package
Shipping^†
NSS60600MZ4T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSV60600MZ4T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSS60600MZ4T3G
SOT−223
(Pb−Free)
4,000 / Tape & Reel
NSV60600MZ4T3G
SOT−223
(Pb−Free)
4,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
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