NSS60600MZ4_16 Datasheet, PDF (4/6 Pages) ON Semiconductor – PNP Transistor

1000
100
150°C
25°C
−40°C
NSS60600MZ4
TYPICAL CHARACTERISTICS
V_CE = 2 V
1000
100
150°C
25°C
−40°C
V_CE = 4 V
10
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1
I_C/I_B = 10
0.1
0.01
150°C
25°C
−40°C
10
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
1
I_C/I_B = 50
−40°C
25°C
0.1
150°C
0.001
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
10
1.2
T_J = 25°C
1.1 V_CE = 2 V
1.0
1
0.9
I_C = 6 A
0.8
−40°C
0.7
0.6
25°C
3A
0.5
0.1
0.4
2A
0.3
150°C
0.1 A
1A
0.2
0.5 A
0.1
0.01
0
1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 0.001
0.01
0.1
1
10
I_B, BASE CURRENT (A)
I_C, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. V_BE(on) Voltage
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