NSS40301MDR2G Datasheet, PDF (5/6 Pages) ON Semiconductor – Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor

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NSS40301MDR2G
TYPICAL CHARACTERISTICS
80
70
60
50
C_ibo (pF)
40
C_obo (pF)
30
20
10
1
2
3
4
5
6
0 5 10 15 20 25 30 35 40
V_EB, EMITTER−BASE VOLTAGE (V)
V_cb, COLLECTOR−BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1 ms
1s
10 ms
1.0
100 ms
0.1
Thermal Limit
0.01
Single Pulse Test at T_A = 25°C
0.001
0.01
0.1
1.0
10
100
V_CE (V_dc)
Figure 9. Safe Operating Area
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