NSS40301MDR2G Datasheet, PDF (4/6 Pages) ON Semiconductor – Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor

NSS40301MDR2G
TYPICAL CHARACTERISTICS
0.16
0.14 ^{IC/IB = 10}
0.12
150°C
25°C
0.10
−55°C
0.08
0.06
0.04
0.02
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
700
600 ^{150°C (2.0 V)}
150°C (5.0 V)
500
25°C (5.0 V)
400 _{25°C (2.0 V)}
300
−55°C (5.0 V)
200 −55°C (2.0 V)
100
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
0.9 V_CE = +2.0 V
0.8
−55°C
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
0.30
0.25
I_C/I_B = 100
0.20
150°C
0.15
25°C
0.10
−55°C
0.05
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
0.9 ^IC^/IB ^{= 10}
0.8
−55°C
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
100 mA
1A 2A
3A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
0.001
0.01
0.1
I_b, BASE CURRENT (A)
Figure 6. Saturation Region
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