NSS40301MDR2G Datasheet, PDF(3/6 Page) ON Semiconductor – Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor

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NSS40301MDR2G Datasheet, PDF (3/6 Pages) ON Semiconductor – Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor

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NSS40301MDR2G

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector âEmitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

Vdc

Collector âBase Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

Vdc

Emitter âBase Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 6.0 Vdc)

V(BR)EBO

6.0

Vdc

ICBO

mAdc

0.1

IEBO

mAdc

0.1

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = 10 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V) (Note 5)

Collector âEmitter Saturation Voltage (Note 4)

(IC = 0.1 A, IB = 0.010 A)

(IC = 1.0 A, IB = 0.100 A)

(IC = 1.0 A, IB = 0.010 A)

(IC = 2.0 A, IB = 0.200 A)

hFE

200

400

200

350

180

340

180

320

hFE(1)/hFE(2)

0.9

0.99

VCE(sat)

0.008

0.011

0.044

0.060

0.080

0.115

0.082

0.115

Base âEmitter Saturation Voltage (Note 4)

(IC = 1.0 A, IB = 0.01 A)

VBE(sat)

0.780

0.900

Base âEmitter Turnâon Voltage (Note 4)

(IC = 0.1 A, VCE = 2.0 V)

(IC = 0.1 A, VCE = 2.0 V) (Note 6)

Cutoff Frequency

(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)

VBE(on)

VBE(1) â VBE(2)

100

0.650

0.3

0.750

2.0

MHz

Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)

Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

Cibo

Cobo

320

450

Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

100

Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

100

Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

780

Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

110

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle â¤ 2%.

5. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator.

6. VBE(1) â VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package.

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