NSS40300DDR2G Datasheet, PDF (5/6 Pages) ON Semiconductor – Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor

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NSS40300DDR2G
TYPICAL CHARACTERISTICS
C_ibo (pF)
1
2
3
4
5
V_EB, EMITTER BASE VOLTAGE (V)
Figure 7. Input Capacitance
10
1.0
100
90
80
70
60
50
C_obo (pF)
40
30
6
0 5 10 15 20 25 30 35 40
V_cb, COLLECTOR BASE VOLTAGE (V)
Figure 8. Output Capacitance
1 ms
1s
10 ms
100 ms
0.1
Thermal Limit
0.01
0.001 ^{Single Pulse Test at TA = 25°C}
0.01
0.1
1.0
10
100
V_CE (V_dc)
Figure 9. Safe Operating Area
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