NSS40300DDR2G Datasheet, PDF (4/6 Pages) ON Semiconductor – Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor

NSS40300DDR2G
TYPICAL CHARACTERISTICS
0.25
I_C/I_B = 10
0.20
0.15
0.10
150°C
−55°C
25°C
0.05
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
800
150°C (5.0 V)
700
150°C (2.0 V)
600
25°C (5.0 V)
500
400 ^{25°C (2.0 V)}
300 −55°C (5.0 V)
200 _{−55°C (2.0 V)}
100
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
0.9 V_CE = −2.0 V
0.8
−55°C
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
0.30
0.25
I_C/I_B = 100
0.20
−55°C
25°C
150°C
0.15
0.10
0.05
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.0 ^IC^/IB ^{= 10}
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
2.0
1.8
100 mA
1.6
1A
2A
3A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.0001
0.001
0.01
0.1
I_b, BASE CURRENT (A)
Figure 6. Saturation Region
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