NSS40300DDR2G Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor

NSS40300DDR2G
THERMAL CHARACTERISTICS
Characteristic
Symbol
SINGLE HEATED
Total Device Dissipation (Note 1)
P_D
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T_A = 25°C
Derate above 25°C
R_qJA
P_D
Thermal Resistance, Junction−to−Ambient (Note 2)
DUAL HEATED (Note 3)
R_qJA
Total Device Dissipation (Note 1)
P_D
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T_A = 25°C
Derate above 25°C
R_qJA
P_D
Thermal Resistance, Junction−to−Ambient (Note 2)
R_qJA
Junction and Storage Temperature Range
T_J, T_stg
1. FR−4 @ 10 mm², 1 oz. copper traces, still air.
2. FR−4 @ 100 mm², 1 oz. copper traces, still air.
3. Dual heated values assume total power is the sum of two equally powered devices.
Max
576
4.6
217
676
5.4
185
653
5.2
191
783
6.3
160
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
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