NSS12601CF8T1G Datasheet, PDF (5/6 Pages) ON Semiconductor – 12 V, 8.0 A, Low VCE(sat) NPN Transistor

NSS12601CF8T1G
PACKAGE DIMENSIONS
ChipFETt
CASE 1206A-03
ISSUE H
H_E
e1
D
8765
1234
q
E
b
c
e
L
5678
4321
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
MILLIMETERS
DIM MIN NOM MAX
A 1.00
1.05
1.10
b
0.25
0.30
0.35
c
0.10
0.15
0.20
D 2.95
3.05
3.10
E 1.55
1.65
1.70
e
0.65 BSC
e1
0.55 BSC
L
0.28
0.35
0.42
H E 1.80
1.90
2.00
q
5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
0.011
0.071
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.014
0.075
5° NOM
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. COLLECTOR
4. BASE
5. EMITTER
6. COLLECTOR
7. COLLECTOR
8. COLLECTOR
SOLDERING FOOTPRINT*
2.032
1
0.08
2.032
1
0.08
2.362
0.093
0.635
0.025
PITCH
2.362
0.093
1.727
0.068
0.457
8X
0.018
8X
0.66
0.026
Basic Style
ǒ mm Ǔ
inches
0.457
2X _0.018
2X
0.66
0.026
Styles 1 and 4
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ǒ mm Ǔ
inches
http://onsemi.com
5