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NSS12601CF8T1G Datasheet, PDF (1/6 Pages) ON Semiconductor – 12 V, 8.0 A, Low VCE(sat) NPN Transistor
NSS12601CF8T1G
12 V, 8.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor's e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•ăThis is a Pb-Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
Collector Current - Continuous
Collector Current - Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
12
Vdc
12
Vdc
6.0
Vdc
6.0
Adc
8.0
A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1)
830
mW
6.7
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 1)
150
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 2)
1.4
W
11.1 mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 2)
90
°C/W
Thermal Resistance,
Junction-to-Lead #1
RqJL (Note 2)
15
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
-55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-ā4 @ 100 mm2, 1 oz copper traces.
2. FR-ā4 @ 500 mm2, 1 oz copper traces.
©Ă Semiconductor Components Industries, LLC, 2007
1
May, 2007 - Rev. 1
http://onsemi.com
12 VOLTS, 8.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 30 mW
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
5
EMITTER
8
1
ChipFET]
CASE 1206A
STYLE 4
MARKING DIAGRAM
VF MĂ
G
VF = Specific Device Code
M = Month Code
G = Pb-Free Package
PIN CONNECTIONS
C8
C7
C6
E5
1C
2C
3C
4B
ORDERING INFORMATION
Device
Package
Shipping†
NSS12601CF8T1G ChipFET
(Pb-Free)
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS12601CF8/D