NSS12601CF8T1G Datasheet, PDF (3/6 Pages) ON Semiconductor – 12 V, 8.0 A, Low VCE(sat) NPN Transistor

NSS12601CF8T1G
0.25
0.20
I_C/I_B = 10
0.15
0.10
0.05
150°C
25°C
-55 °C
0.30
0.25
I_C/I_B = 100
0.20
0.15
0.10
0.05
150°C
25°C
-55 °C
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
650
150°C (5.0 V)
600
150°C (2.0 V)
550
500
450
25°C (5.0 V)
400
25°C (2.0 V)
350
300
250
-55 °C (5.0 V)
200
-55 °C (2.0 V)
150
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.3
1.2 I_C/I_B = 10
1.1
1.0
0.9
-55 °C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.1
1.0
V_CE = 2.0 V
0.9
0.8
-55 °C
1.0
10 mA
0.8
100 mA
I_C = 500 mA
300 mA
0.7
0.6
25°C
0.6
0.5
0.4
0.4
150°C
0.3
0.2
0.2
0.1
0
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
I_B, BASE CURRENT (mA)
Figure 5. Base Emitter Turn-On Voltage vs.
Collector Current
Figure 6. Saturation Region
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