NSBC144WPDP6 Datasheet, PDF (5/6 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 47 k, R2 = 22 k

NSBC144WPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC144WPDP6
10
I_C/I_B = 10
1
1000
V_CE = 10 V
100
25C
150C
−55C
0.1 ^150C
0.01
0
25C
−55C
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) vs. I_C
10
1
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
7
100
f = 10 kHz
6
I_E = 0 A
T_A = 25C
10
−55C
5
4
1
25C
3
0.1
2
150C
0.01
1
0
0
10
V_O = 5 V
0.001
20
30
40
50
0
4
8
12
16
20
24 28
V_R, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
V_in, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
25C
10
−55C
150C
1
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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