NSBC144WPDP6 Datasheet, PDF (4/6 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 47 k, R2 = 22 k

1
I_C/I_B = 10
0.1
150C
−55C
NSBC144WPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC144WPDP6
25C
1000
V_CE = 10 V
100
25C
10
150C
−55C
0.01
0
2.4
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) vs. I_C
1
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 10 kHz
I_E = 0 A
T_A = 25C
10
−55C
25C
1
150C
0.1
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.01
50
0
4
V_O = 5 V
8
12
16
20
24 28
V_in, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
25C
10
−55C
150C
1
0.1
0
V_O = 0.2 V
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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