NSBC144WPDP6 Datasheet, PDF (2/6 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 47 k, R2 = 22 k

NSBC144WPDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
NSBC144WPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
T_A = 25C
Derate above 25C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
NSBC144WPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
T_A = 25C
Derate above 25C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
Junction and Storage Temperature Range
T_J, T_stg
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
3. Both junction heated values assume total power is sum of two equally powered channels.
Max
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
−55 to +150
Unit
MW
mW/C
C/W
MW
mW/C
C/W
C
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