NSBC114EPDP6T5G Datasheet, PDF (5/7 Pages) ON Semiconductor – Dual Digital Transistors (BRT)

NSBC114EPDP6T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 NPN TRANSISTOR
1.0
I_C/I_B = 10
0.10
T_A = 25°C
T_A = 150°C
T_A = −55°C
1000
V_CE = 10 V
100
25°C
150°C
−55°C
10
0.01
0
2.40
2.20
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0
1.0
5 10 15 20 25 30 35 40 45 50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 1. V_CE(sat) vs. I_C
Figure 2. DC Current Gain
100
150°C
10
1
0.1 _25°C
−55°C
0.01
5 10 15 20 25 30 35 40 45 50
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_CB, COLLECTOR BASE VOLTAGE (V)
V_in, INPUT VOLTAGE (V)
Figure 3. Output Capacitance
Figure 4. Output Current vs. Input Voltage
10
−55°C
25°C
1.0
150°C
0.10
0 5 10 15 20 25 30 35 40 45 50
I_C, COLLECTOR CURRENT (mA)
Figure 5. Input Voltage vs. Output Current
http://onsemi.com
5