NSBC114EPDP6T5G Datasheet, PDF (2/7 Pages) ON Semiconductor – Dual Digital Transistors (BRT)

NSBC114EPDP6T5G Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
SINGLE HEATED
Total Device Dissipation
P_D
T_A = 25°C (Note 1)
Derate above 25°C
Thermal Resistance (Note 1)
Junction-to-Ambient
R_qJA
Total Device Dissipation
P_D
T_A = 25°C (Note 2)
Derate above 25°C
Thermal Resistance (Note 2) Junction-to-Ambient
DUAL HEATED (Note 3)
R_qJA
Total Device Dissipation
P_D
T_A = 25°C (Note 1)
Derate above 25°C
Thermal Resistance (Note 1)
Junction-to-Ambient
R_qJA
Total Device Dissipation
P_D
T_A = 25°C (Note 2)
Derate above 25°C
Thermal Resistance (Note 2) Junction-to-Ambient
R_qJA
Junction and Storage Temperature
T_J, T_stg
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
DEVICE MARKING AND RESISTOR VALUES
Device
NSBC114EPDP6T5G
NSBC124EPDP6T5G
NSBC144EPDP6T5G
NSBC114YPDP6T5G
NSBC115TPDP6T5G
NSBC123TPDP6T5G
NSBC143EPDP6T5G
NSBC143ZPDP6T5G
NSBC144WPDP6T5G
NSBC123JPDP6T5G
Package
SOT−963
SOT−963
SOT−963
SOT−963
SOT−963
SOT−963
SOT−963
SOT−963
SOT−963
SOT−963
Marking
(Clockwise Rotation)
L
R (90°)
K (180°)
Q (90°)
J (180°)
A (180°)
V (90°)
Y (90°)
T (90°)
D (180°)
Max
231
1.9
540
269
2.2
464
339
2.7
369
408
3.3
306
−55 to +150
R1 (kW)
10
22
47
10
100
2.2
4.7
4.7
47
2.2
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R2 (kW)
10
22
47
47
∞
∞
4.7
47
22
47
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