MUN5312DW1_16 Datasheet, PDF (5/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

1
I_C/I_B = 10
 0.1
MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5312DW1, NSBC124EPDXV6
25°C
150°C
T_A = -55°C
1000
V_CE = 10 V
100
 0.01
10
T_A = 150°C
25°C
-55°C
 0.001
0
 10
 20
 30
 40
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) vs. I_C
1
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
10
100
25°C
9
f = 10 kHz
150°C
8
l_E = 0 A
10
T_A = -55°C
7
T_A = 25°C
6
1
5
4
 0.1
3
2
 0.01
1
V_O = 5 V
0
 0.001
0
10
20
30
40
50
0 1  2 3  4  5  6  7  8  9 10
V_R, REVERSE VOLTAGE (V)
V_in, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
V_O = 0.2 V
10
T_A = -55°C
1
25°C
150°C
 0.1
0
10
 20
 30
 40
 50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
www.onsemi.com
5