MUN5312DW1_16 Datasheet, PDF (3/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
ELECTRICAL CHARACTERISTICS (T_A = 25°C both polarities Q₁ (PNP) & Q₂ (NPN), unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V_CB = 50 V, I_E = 0)
I_CBO
−
nAdc
−
100
Collector-Emitter Cutoff Current
(V_CE = 50 V, I_B = 0)
I_CEO
−
nAdc
−
500
Emitter-Base Cutoff Current
(V_EB = 6.0 V, I_C = 0)
I_EBO
−
mAdc
−
0.2
Collector-Base Breakdown Voltage
(I_C = 10 mA, I_E = 0)
V_(BR)CBO
50
−
Vdc
−
Collector-Emitter Breakdown Voltage (Note 6)
(I_C = 2.0 mA, I_B = 0)
V_(BR)CEO
50
−
Vdc
−
ON CHARACTERISTICS
DC Current Gain (Note 6)
(I_C = 5.0 mA, V_CE = 10 V)
h_FE
60
100
−
Collector-Emitter Saturation Voltage (Note 6)
(I_C = 10 mA, I_B = 0.3 mA)
V_CE(sat)
−
V
−
0.25
Input Voltage (Off)
(V_CE = 5.0 V, I_C = 100 mA) (NPN)
(V_CE = 5.0 V, I_C = 100 mA) (PNP)
Input Voltage (On)
(V_CE = 0.2 V, I_C = 5.0 mA) (NPN)
(V_CE = 0.2 V, I_C = 5.0 mA) (PNP)
V_i(off)
Vdc
−
1.2
−
−
1.2
−
V_i(on)
Vdc
−
1.9
−
−
2.0
−
Output Voltage (On)
(V_CC = 5.0 V, V_B = 2.5 V, R_L = 1.0 kW)
V_OL
−
Vdc
−
0.2
Output Voltage (Off)
(V_CC = 5.0 V, V_B = 0.5 V, R_L = 1.0 kW)
V_OH
4.9
−
Vdc
−
Input Resistor
R1
15.4
22
28.6
kW
Resistor Ratio
R₁/R₂
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
400
350
300
250
200
(1) (2) (3)
150
(1) SOT−363; 1.0 × 1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm², 1 oz. Copper Trace
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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