MUN5312DW1_16 Datasheet, PDF (4/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

1
I_C/I_B = 10
0.1
0.01
MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5312DW1, NSBC124EPDXV6
25°C
150°C
T_A = -55°C
1000
V_CE = 10 V
100
10
T_A = 150°C
25°C
-55°C
0.001
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
1
10
20
30
40
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) vs. I_C
Figure 3. DC Current Gain
f = 10 kHz
I_E = 0 A
T_A = 25°C
100
150°C
25°C
10
1
T_A = -55°C
0.1
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.01
V_O = 5 V
0.001
50
0 1 2 3 4 5 6 7 8 9 10
V_in, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
V_O = 0.2 V
10
T_A = -55°C
1
25°C
150°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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